Forming a conductive structure in a semiconductor device

ABSTRACT

A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal silicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multi-layer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.

CROSS REFERENCE TO RELATED APPLICATIONS

This is a continuation of U.S. Ser. No. 09/620,442, filed Jul. 20, 2000,now U.S. Pat. No. 6,596,595, which is a divisional of U.S. Ser. No.09/397,793, filed Sep. 15, 1999, now U.S. Pat. No. 6,362,086, which is adivisional of U.S. Ser. No. 09/031,407, filed Feb. 26, 1998, now U.S.Pat. No. 6,291,868.

BACKGROUND

The invention relates to forming a conductive structure in asemiconductor device.

Advanced integrated circuits in a semiconductor device require highspeed interconnecting lines between circuits for improved device speed.Interconnecting lines are typically made of metal, e.g., aluminum,titanium. However, in some parts of a semiconductor device, particularlyin regions where components are densely packed (such as the array of amemory device), or in regions where further heat steps are needed afterformation of the interconnecting line during the manufacturing process,other materials are also widely used to form interconnecting lines,e.g., doped polysilicon or N+ or P+ diffused regions.

The different types of interconnecting lines exhibit differentresistivities, with metal generally having the lowest resistivity.Polysilicon, which is also typically used as the conductive electrode atthe gate of an N-channel or P-channel metal-oxide-silicon field effecttransistor (MOSFET), exhibits a higher resistivity than metal.

As the speed requirements of semiconductors increase, the resistance ofinterconnecting lines, especially those formed of a higher resistivitymaterial (such as polysilicon) reduces switching speeds of circuits inthe device. The resistance of a line increases proportionately with itslength. Thus, a polysilicon line running over a long length andconnected to a large capacitive load, such as a wordline in a memoryarray connected to multiple transistors in the array, would cause a highRC delay during circuit switching.

One approach to reduce the resistivity of a polysilicon interconnectline is to use a polycide structure, in which a low resistance suicide(e.g., WSix) is formed on top of a doped polysilicon layer. Thiseffectively forms a two-layer interconnect line in which the silicidelayer provides a low resistivity conductive path.

Three-layer interconnecting lines have also been proposed, including apolymetal composite structure having tungsten (W) as the top layer,tungsten silicide nitride (WSiN) as the intermediate layer, andpolysilicon as the bottom layer. The polymetal structure has aresistivity lower than the polycide structure that includes tungstensilicide on polysilicon.

SUMMARY

In general, according to one embodiment, a method of forming aconductive structure in a semiconductor device includes forming a lowerelectrically conductive layer on a support surface and forming anelectrically conductive barrier over the lower layer. Further, an upperconductive layer is formed over the barrier layer, the upper conductivelayer including metal silicide.

Other features and embodiments will become apparent from the followingdescription and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an enlarged, cross-sectional view of a transistor in asemiconductor device.

FIG. 2 is a flow diagram of the fabrication steps for forming portionsof the transistor structure of FIG. 1.

FIGS. 3, 4, and 5 are block diagrams of single-wafer rapid thermalprocessing systems for performing selective oxidation.

FIG. 6 is graph of an X-ray photoelectron spectrometer (XPS) surfaceanalysis showing the selective oxidation region for a multilayerconductive structure.

Referring to FIG. 1, a multilayer, low resistivity conductive structureis described. The conductive structure can be used as part of the gatestructure of a MOS transistor (as shown) or as an interconnecting lineto connect circuits, such as a wordline used to connect transistorsconnected to memory cells in a memory array.

In FIG. 1, a transistor 12 is formed on a base 10, which includes asemiconductor (e.g., silicon) substrate or multilayer substrate (e.g.,silicon-on-insulator or SOI substrate). The transistor 12 is adjacent afield oxide layer 110. The transistor includes source and drain regions108A and 108B and a channel region 109. If the transistor 12 is used ina memory array, the source would be connected to a memory cell capacitorstructure (not shown), while the drain would be connected to a digitline (not shown). The transistor 12 can also have many other uses in asemiconductor device.

A gate oxide layer 106 is formed above the channel region 109. A gatestack 112 is then formed over the gate oxide layer 106. In oneembodiment, the gate structure 112 includes three electricallyconductive layers (100, 102, 104) to reduce the resistivity of the gate.The three-layer structure can also be used to form an interconnectingline separate from the transistor 12, in which case the gate oxide layer106 beneath the stack 112 would be replaced with other insulatinglayers.

The bottom conductive layer 104 is formed of a material that includessilicon, e.g., doped or undoped polysilicon, silicon germanium (SiGex),or amorphous silicon. The top conductive layer 100 includes a lowresistivity material, which can be metal or metal silicide. Sandwichedbetween the top layer 100 and the bottom layer 104 is a conductivediffusion barrier layer 102 that is resistant to oxidation,agglomeration, and silicidation.

The barrier layer 102 acts to prevent agglomeration of silicon from thebottom layer 104 into the top conductive layer 100. For example,titanium silicide (TiSix) formed on polysilicon may result inagglomeration of silicon into the TiSix grains, which can increaseresistivity. Silicidation can also occur between certain top layer andbottom layer materials, such as tungsten (W) formed on polysilicon, inwhich formation of higher resistivity Wsix can occur.

The barrier layer 102 is formed of a material that includes metalsilicide, metal nitride, of metal silicide nitride, such as tungstensilicide (Wsix), tungsten silicide nitride (WSixNy), titanium silicidenitride (TiSixNy), tantalum silicide (TaSix), tantalum silicide nitride(TaSixNy), molybdenum silicide (MoSix), and molybdenum silicide nitride(MoSixNy), hafnium silicide (HfSix), hafnium silicide nitride (HfSixNy),zirconium silicide nitride (ZrSixNy), niobium silicide (NbSix), niobiumsilicide nitride (NbSixNy), and titanium nitride (TiNy).

Generally, a silicide, nitride, or silicide nitride composition isresistant to oxidation and is stable at high temperatures. The abilityto withstand high temperatures is particularly important since the gatestructure or interconnecting line is put through various subsequent hightemperature process steps, including source-drain implant anneal,oxidation, and glass flow/reflow.

Metal silicides, nitrides, or silicide nitrides also have otherdesirable properties, including low resistivity, ease of formation,controlled oxidation properties, and stability in an oxidizing ambient.These materials also have excellent adhesion characteristics and exhibitlow stress contacts.

The resistivity of a metal silicide, metal nitride, or metal silicidenitride barrier layer 102 is dependent on several factors, including themethod of formation, annealing times and temperatures, and chemicalpurity. The stoichiometry of the refractory metal silicide, metalnitride, or metal silicide nitride composition can also affectresistivity; e.g., the x value of an MSix composition and the x and yvalues of an MSixNy composition can affect the resistivity.

In the barrier layer 102 containing an MSixNy composition, the value ofx for silicon can be set at a value greater than 2, while the value of yfor nitrogen is set in the range between about 0.1 and 0.9, preferablybetween about 0.5-0.6. With higher y values, the MSixNy compositions aremore stable at higher temperatures, but the compositions also havehigher resistivities.

The top conductive layer 100 can be made from low resistivity materials,e.g., metal or metal silicides, such as tungsten (W), cobalt (Co),titanium silicide (TiSix), cobalt silicide (CoSix), nickel silicide(NiSix), or other metal or metal silicide layers. Typically, the valueof x may be greater than or equal to 2, with the exception of NiSix,where x can be equal to one. Generally, the metal silicide compositionsare more stable at high temperatures than tungsten or cobalt, which tendto have relatively high oxidation rates.

The gate stack 112 and the gate oxide 106 are electrically insulated byside insulating spacers 114A and 114B and a top insulating layer 116.The insulating materials can be formed using silicon nitride (Si₃N₄) orsilicon dioxide (SiO₂).

Referring to FIG. 2, the fabrication flow of portions of the transistor12 shown in FIG. 1 is illustrated. After the field oxide 110 andsource-drain regions 108A and 108B are formed in the base 10, the gateoxide 106 is formed on the surface of the base 10 (step 202) by thermalgrowth or deposition such as chemical vapor deposition (CVD). Thethickness of the gate oxide 106, for current generation technologies,can typically range from about 30 angstroms (A) to 150 A.

Next, the bottom conductive layer 104 (which can include polysilicon,SiGex, or amorphous silicon) is formed, such as by deposition using alow pressure chemical vapor deposition (LPCVD) process. The bottomconductive layer 104 can have an exemplary thickness ranging from about100 A to 3,000 A. The polysilicon, SiGex, or amorphous silicon layer 104can also be doped with a dopant such as phosphorous or boron to improveelectrical conductivity.

Next, the barrier layer 102 is formed (step 206) to a thickness betweenabout 50 A to 500 A, for example. Various methods can be used to formthe diffusion barrier layer 102, including using chemical vapordeposition (CVD), physical vapor deposition (PVD), or depositionfollowed by a high temperature anneal of a metal (e.g., tungsten ortitanium) in an ambient containing nitrogen, ammonia (NH₃), or hydrazine(N₂H₄) in a rapid thermal processing (RTP) system.

Formation of metal silicide barrier layers using CVD may involvedeposition of the metal onto the bottom conductive layer 104 followed bysubsequent heating, which causes the metal and silicon containingmaterial in the layer 104 to react to form a silicide. This type ofsilicide formation can yield low resistivity silicide layers.

To form a barrier layer 102 having metal silicide nitride (MSixNy) ormetal nitride (MNy), the metal deposition onto the bottom conductivelayer step is followed by a high temperature (e.g., 600-1000° C.) annealin an ambient including NH₃ or N₂H₄. The N₃ or N₂H₄ anneal can beperformed in a rapid thermal processing (RTP) system for a predeterminedamount of time, e.g., between about 1-60 seconds. If the metal depositedis tungsten on a polysilicon, SiGex, or amorphous silicon layer, theanneal step forms a barrier layer that contains Wsix and SiN, with noformation (or very little formation) of tungsten nitride (WN), asillustrated by the X-ray photoelectron spectrometer (XPS) profile graphshown in FIG. 6. Wsix and SiN are more oxidation resistant than WN ortungsten. The high temperature anneal can also be performed with atitanium on a silicon-containing material structure. The anneal in theNH₃ or N₂H₄ ambient forms a TiNy barrier layer.

FIG. 6 shows the percentage of materials present in a Wsix-polysiliconstack after anneal of a W/poly-Si structure in an NH₃ ambient at 750° C.The depth (as defined by an axis generally projecting perpendicularlyfrom the surface of the base 10) begins at the top surface (0 Å) of thestack 112 (without the top conductive layer 100) and continuesdownwardly into the stack. A layer of tungsten is initially deposited onpolysilicon. After anneal in the NH₃, the layers formed include atungsten layer 100 at the top and a Wsixny barrier layer 102 between thetop tungsten layer and the bottom conductive layer 104.

PVD by sputtering or evaporation can also be used to form metalsilicides and metal silicide nitrides. The evaporation method utilizessimultaneous deposition of the metal and silicon (or metal, silicon andnitrogen) under high vacuum or sputtering of a metal silicide compositetarget. Sputtering of the metal and silicon (or metal, Si, and N) can beperformed using RF or magnetron sputtering.

After formation of the barrier layer 102, the metal or metal silicideconductive layer 100 is formed over the barrier layer 102 (step 208),using either CVD or PVD techniques, for example. The conductive layer100 can be formed to a thickness between about 200 A to 2000 A.Following formation of the top conductive layer 100, the electricallyinsulating cap layer 116 is formed over the conductive layer 100 as anetch stop and oxidation barrier (step 210). The insulating layer 116 canbe formed using vapor deposited SiO₂ or Si₃N₄. A dry etch process (suchas reactive ion etching) is then used to form the gate stack (step 212).

After the gate stack is formed, nitride insulating spacers 114A and 114Bcan optionally be formed using known methods, such as by LPCVD or PECVDnitride (step 214). Oxide spacers can also be used, such as those formedusing CVD with tetraethylorthosilicate (TEOS). Whether this step isperformed depends on the type of materials used in forming the stack112.

For example, if a stack having a tungsten conductor on a titaniumnitride barrier is used, then the spacers are useful as etch barriers aswell as oxidation barriers in subsequent processing steps. The spacers116A and 116B may also be used with other stacks that contain a metalconductor on a metal silicide or nitride barrier.

The spacer forming step 214 may not be needed when a stack having ametal silicide conductor on a metal silicide or metal silicide nitridebarrier (e.g., TiSix conductor on Wsix barrier) is used. With suchstacks, the spacer formation is performed after the source-drainre-oxidation step (216).

The source-drain re-oxidation step (216) is performed to remove damagecaused by reactive ion etching and patterning of the gate electrode. There-oxidation step causes oxide to be thermally grown on the sidewall ofthe etched polysilicon, SiGex, or amorphous silicon electrode, whichalso serves to thicken the gate oxide 106 at the gate edge to improvethe gate oxide dielectric strength. The source-drain re-oxidation can beperformed in the following environment: O₂; O₂/H₂; N₂O; NO; or aselective ambient, such as an H₂O/H₂ ambient in which the ratio of H₂Oto H₂ is controlled to predetermined ranges.

If the top conductive layer 100 is formed of a metal silicide material,and the barrier layer 102 is formed of a metal silicide or metalsilicide nitride material, then the two layers are relatively resistantto oxidation and any of the source-drain re-oxidation techniques listedabove can be used. However, certain materials that can be used in thetop conduction layer 100, such as tungsten (W) or titanium (Ti), andcertain materials in the barrier layer 102, such as a metal nitride(e.g., TiN), have relatively high oxidation rates.

For example, tungsten oxidation rate is much faster than that ofsilicon, and typical oxidation processes can cause the volume oftungsten oxide (WO₃) to be much larger than that of W. If WO₃ formationoccurs, peeling or morphological degradation of the tungsten film mayoccur. Thus, in cases where the top conduction layer 100 has arelatively high oxidation rate, a selective oxidation process ispreferred over conventional oxidation or wet oxidation. Similar issuesexist when titanium is used as the top conduction layer 100.

Possible metal nitride materials (in addition to the materials discussedabove) for the barrier layer 102 include tungsten nitride (WN) ortitanium nitride (TiN), which are susceptible to relatively fastoxidation. If such barrier layers are used, then selective oxidation maybe particularly advantageous. However, even if metal silicide topconductive layers 100 or metal silicide or metal silicide nitridebarrier layers 102 are used, the selective oxidation process may alsohelp to reduce the rate of oxidation of those materials.

Selective source drain re-oxidation can be performed in a water vaporambient with controlled amounts of hydrogen added in a single-waferrapid thermal processing (RTP) system (e.g., an AG8108 Heat Pulse RTPsystem) for selective oxidation of silicon over the metal, metalsilicide, metal silicide nitride, or metal nitride top conducting layer100 or barrier layer 102. In addition, use of a single-wafer system,such as the three types shown in FIGS. 3-5, provide several advantagesover use of a furnace that can receive multiple wafers. In asingle-wafer RTP system, better control of process conditions can beachieved. For example, better uniformity of temperature can be achievedover the entire surface of the wafer, which is particularly advantageouswhen large wafers (e.g., 300 mm wafers) are used. In addition, betterambient control and uniformity of oxidation over the entire processedsurface of a wafer can be achieved.

The described selective oxidation processes (shown in FIGS. 3, 4, and 5)can also be applied to multi-wafer furnace systems.

Referring to FIG. 3, an RTP single-wafer system uses an ambient ofargon-hydrogen (Ar—H₂) and water vapor. Other inert gases besides Ar canalso be used. By controlling the ratio of H₂O to O₂, use of this ambientcan reduce oxidation of a metal (e.g., tungsten) top conductive layer100 and WN, Wsixny, TiN, and other metal nitride conductive diffusionbarrier layers 102.

A quartz vessel 300 (which can contain 20 liters of liquid) is filledapproximately half full of deionized water through a liquid flowcontroller 304 from a source 306. The vessel 300 is then heated andmaintained at an elevated temperature, e.g., between about 95-98° C.,through use of an external heating blanket 314 affixed to the outside ofthe quartz vessel 300. The elevated temperature evaporates portions ofthe deionized water.

The temperature of the deionized water in the vessel 300 is monitored bya thermocouple 308 inserted into a sheath in the quartz vessel 300. Theover temperature trip level of the thermocouple 308 can be set at about120° C. The thermocouple 308 is connected to a temperature and waterlevel controller 310 for monitoring. The controller 310 adjusts thetemperature of the blanket 314 as the liquid temperature in the vessel300 varies. Over temperature thermocouples (not shown) can also monitorthe heater blanket 314 temperature to prevent heater blanket temperaturerunaway.

The level of the deionized water in the vessel 300 is monitored by aliquid level sensor 312, also connected to the controller 310. Thecontroller 310 adjusts the flow rate through the flow controller 304 tomaintain the level of the liquid in the vessel 300. The autofill featurefor the deionized water is disabled during a process run (to perform thesource drain re-oxidation) so as not to disturb the water vapordelivery.

Delivery of the deionized water vapor is achieved by injecting an Ar—H₂mixture into the vessel 300 through a mass flow controller 322 at apredetermined rate. The Ar—H₂ comes from a source 318. The H₂ canoriginate from a pure hydrogen source or from a breakdown of a hydrogencontaining compound such as NH₃ or N₂H₄. The resulting water and argonvapor is transported through a line 316 (which can be a ½ inch heattaped stainless steel line) maintained at a predetermined temperature,e.g., about 110° C., to prevent recondensation of the vapor.

The vapor in the line 316 flows through a vapor flow controller 324 to asingle-wafer process chamber 302. Other conventional RTP process gasesare also provided through flow controllers 326 to the processor chamber302. The flow of H₂O can be selected to be in the range between about 1SCCM (standard cubic centimeters per minute) and 50 SLM (standard litersper minute), with a preferred range of about 1 SCCM to 10 SLM. The flowrate of H₂ can be selected to a value in the range between about 1 SCCMand 50 SLM, with a preferred range of about 1 SCCM to 20 SLM. In theAG8108 system, the H₂O/H₂ partial pressure ratio can be maintainedbetween about 2.3 and 2.8. However, the ratios vary according to thespecific types of RTP systems used. The processing temperature in thesingle-wafer processing chamber can be maintained between about 950° C.and 1100° C. Selective oxidation of silicon over tungsten of about 2:1can be achieved using the system of FIG. 3.

Referring to FIG. 4, an alternative single-wafer RTP system performssource-drain selective re-oxidation using a different transport system.Elements that are the same as in the RTP system of FIG. 1 have commonreference numerals. As in the RTP system of FIG. 1, a predeterminedamount of deionized water is kept in the vessel 300 (e.g., half full ina 20-liter vessel). However, delivery of the deionized water vapor isachieved through the use of a vapor flow controller 330, rather thanthrough use of the mass flow controller 322 to pump argon 318 into thevessel 300 to move vapor through the line 316. The pressure in the watervessel 300 can be approximately 960 Torr, which is sufficient togenerate ample flow through the vapor flow controller 330. The vapor isthen transported through the line 316 to the process chamber 302, withthe line temperature maintained at about 110° C. to preventrecondensation of the vapor. Hydrogen is passed through one of the vaporflow controllers 326 to the process chamber 302 to perform selectiveoxidation of silicon over other materials.

Referring to FIG. 5, an RTP system with an external torch assembly isused to create the water vapor flow for selective oxidation. Hydrogen(H₂) and oxygen (O₂) are delivered through vapor flow controllers 350and 352, respectively, from sources 354 and 356, respectively. The H₂and O₂ are delivered to an injector 360 inserted into the external torchassembly 358. The torch assembly 358 is maintained at a temperature ofabout 900° C. to provide ignition energy. The resulting water vapor andH₂ mixture is delivered to the single-wafer process chamber 302 via aquartz tube interface 362.

As is the case with the RTP system of FIG. 3, the RTP systems of FIGS. 4and 5 also maintain a predetermined H₂O/H₂ partial pressure ratio andtemperature.

In the RTP system of FIG. 5, safety measures are provided by an externalcontroller 364, which monitors and maintains the external torch elementtemperature and provides over temperature and runaway safeties. Thecontroller 364 can also implement steps to ensure safety associated withusing H₂ as a process gas. The safety mechanisms implemented includemaintaining a particular H₂/O₂ ratio. Thus, H₂ flow is disabled if no O₂is present; H₂ is disabled if the torch temperature is below 700° C.; aninitial nitrogen (N₂) purge is performed of the injector 360 before theflow of H₂ is turned on; and H₂ leak detectors are used to determinewhen to turn off and purge the H₂ line if an H₂ leak is detected. Thecontroller 364 also monitors the temperature of the process chamber 302to prevent water vapor from being formed if the process chamber 302 isbelow 700° C. to prevent recondensation of the water vapor.

Other embodiments are also within the scope of the following claims.Although the layers in the multilayer conductive structure have beendescribed with certain thicknesses for each layer, it is contemplatedthat the layer thicknesses can be varied and still achieve desirableresults. The conductive structure described can be formed with a stackhaving more than three layers. Further, various systems and processeshave been described with particular parameters; these parameters canalso be varied. The systems described have components associated withcertain, specific parameters and values, which can be varied.

1. A method of forming a multi-layer conductive structure in asemiconductor device, the method comprising: forming a first layercontaining silicon; depositing a metal layer over the first layer; andannealing the metal layer in an ambient containing nitrogen, wherein asecond layer containing metal silicide nitride is formed over the firstlayer after annealing.
 2. The method of claim 1, further comprisingperforming selective oxidation of at least one of the layers.
 3. Themethod of claim 2, wherein performing the selective oxidation isperformed in a single-wafer processing chamber.
 4. The method of claim3, wherein performing the selective oxidation comprises: generating apredetermined mixture of H₂ and H₂₀; providing the mixture to thesingle-wafer processing chamber; and heating the chamber to selectivelyoxidize the at least one of the layers.
 5. A method of forming amulti-layer conductive structure in a semiconductor device, the methodcomprising: forming a first layer containing silicon; depositing a metallayer over the first layer; and annealing the metal layer in an ambientcontaining NH₃, wherein a second layer containing metal silicide nitrideis formed over the first layer after annealing.
 6. A method of forming amulti-layer conductive structure in a semiconductor device, the methodcomprising: forming a first layer containing silicon; depositing a metallayer over the first layer; and annealing the metal layer in an ambientcontaining hydrazine, wherein a second layer containing metal silicidenitride is formed over the first layer after annealing.
 7. A method offorming a multi-layer conductive structure in a semiconductor device,the method comprising: forming a first layer containing silicon;depositing a metal layer over the first layer; annealing the metal layerin an ambient containing nitrogen, wherein a second layer containingsilicide is formed over the first layer after annealing; and forming atop conductive layer over the second layer.
 8. A method of forming amulti-layer conductive structure in a semiconductor device, the methodcomprising: forming a first layer containing silicon; depositing a metallayer over the first layer; annealing the metal layer in an ambientcontaining NH₃, wherein a second layer containing silicide is formedover the first layer after annealing; and forming a top conductive layerover the second layer.
 9. A method of forming a multi-layer conductivestructure in a semiconductor device, the method comprising: forming afirst layer containing silicon; depositing a metal layer over the firstlayer; annealing the metal layer in an ambient containing hydrazine,wherein a second layer containing silicide is formed over the firstlayer after annealing; and forming a top conductive layer over thesecond layer.
 10. A method of forming a conductive structure in asemiconductor device, comprising: forming a first electricallyconductive layer on a base; forming a barrier layer over the firstlayer, the barrier layer including a metal silicide composition andhaving a thickness between about 50 Å and 500 Å; and forming a secondelectrically conductive layer over the barrier layer, wherein formingthe barrier layer comprises forming a barrier layer containing tungstensilicide.
 11. A method of forming a conductive structure in asemiconductor device, comprising: forming a first electricallyconductive layer on a base; forming a barrier layer over the firstlayer, the barrier layer including a metal silicide composition andhaving a thickness between about 50 Å and 500 Å; and forming a secondelectrically conductive layer over the barrier layer, wherein formingthe barrier layer comprises forming a barrier layer containing tantalumsilicide.
 12. A method of forming a conductive structure in asemiconductor device, comprising: forming a first electricallyconductive layer on a base; forming a barrier layer over the firstlayer, the barrier layer including a metal silicide composition andhaving a thickness between about 50 Å and 500 Å; and forming a secondelectrically conductive layer over the barrier layer, wherein formingthe barrier layer comprises forming a barrier layer containingmolybdenum silicide.
 13. A method of forming a conductive structure in asemiconductor device, comprising: forming a first electricallyconductive layer on a base; forming a barrier layer over the firstlayer, the barrier layer including a metal silicide composition andhaving a thickness between about 50 Å and 500 Å; and forming a secondelectrically conductive layer over the barrier layer, wherein formingthe barrier layer comprises forming a barrier layer containing hafniumsilicide.
 14. A method of forming a conductive structure in asemiconductor device, comprising: forming a first electricallyconductive layer on a base; forming a barrier layer over the firstlayer, the barrier layer including a metal silicide composition andhaving a thickness between about 50 Å and 500 Å; and forming a secondelectrically conductive layer over the barrier layer, wherein formingthe barrier layer comprises forming a barrier layer containing niobiumsilicide.
 15. A method of forming a conductive structure in asemiconductor device, comprising: forming a first layer containingsilicon; forming a barrier layer over the first layer by depositing ametal layer over the first layer and annealing the metal layer in anambient containing nitrogen; and forming an upper conductive layer overthe barrier layer.
 16. A method of forming a conductive structure in asemiconductor device, comprising: forming a first layer containingsilicon; forming a barrier layer over the first layer by depositing ametal layer over the first layer and annealing the metal layer in anambient containing NH₃; and forming an upper conductive layer over thebarrier layer.
 17. A method of forming a conductive structure in asemiconductor device, comprising: forming a first layer containingsilicon; forming a barrier layer over the first layer by depositing ametal layer over the first layer and annealing the metal layer in anambient containing hydrazine; and forming an upper conductive layer overthe barrier layer.